Clean Room: Micro and Nano Fabrication Facility
BITS Hyderabad’s Micro & Nano Fabrication Cleanroom
To facilitate cutting-edge semiconductor device fabrication and characterisation, BITS Pilani, Hyderabad, houses a state-of-the-art Micro & Nano Fabrication Cleanroom. It is spread across 581 sq. ft., a facility that maintains ISO 6 (Class 1000) standards across 80% of the space, with a dedicated ISO 5 (Class 100) zone for ultra-pure operations. The entire class 100 area is covered with yellow light and dedicated to the Lithography process..
Cleanroom Resources & Requests
Clean room short video
Equipment Usage Request Form
Equipment Slot Booking Form
Clean Room Facility Overview Request Form
Advanced Equipment Driving Precision Micro- and Nano-Fabrication
- Minimum spin speed: 250 rpm
- Maximum spin speed: 12,000 rpm
- Substrate size: Minimum 1 inch diameter
- Used for coating thin films from the nanometer to millimetre range on flat substrates. Film thickness depends on spin speed and the viscosity of the material.
- Measures 2D line profile with scan lengths up to 50 mm
- Step height measurement on a plane substrate up to 1 mm with a vertical resolution of 0.1 nm
- Tip diameter: 2 μm
- Software for levelling data, measuring parameters like surface roughness, RMS, average roughness, and film stress
- Used for material curing and level 1 lithography (no alignment)
- Exposure area: 100 mm x 200 mm
- Wavelength range: 350 nm to 450 nm
- Level 1 lithography ina class 100 clean room; UV curing possible
- Made of PP material, inert to wet chemicals; two compartments
- Used for Si wafer cleaning (RCA process), resist development, removal, and solvent processing
- Class 100 clean room
- Working area: 2 m x 1 m x 0.9 m
- Laminar flow with FFU and HEPA filters, humidity 50% ±2, temp 20 ±2°C, general exhaust provided
- High-temperature alumina furnaces for Si wafer oxidation/annealing metal contacts
- Two zones, each with two tubes (Oxidation, N2 annealing, Ar annealing, non-semiconductors)
- Temperature range: up to 1000°C
- Accuracy: ±5°C
- Hot zone: 15 cm
- Tube diameter: 75 mm
- Ramp up: 7°C/min
- Heating: Resistive
- Tubes: 4
- For depositing oxides like SiO₂, TiO₂, Al₂O₃ on substrates
- Base vacuum: 1 × 10⁻⁶ mbar, process pressure: 5 × 10⁻² mbar
- RF power: 300W
- Substrate size: small to 4-inch diameter
- Target size: 3-inch diameter w/ copper back plate
- Gases: O₂, Ar, N₂; thickness up to 250 nm
- Reactive sputtering with O₂
- UV exposure for transferring mask patterns to the substrate
- Best resolution: 2 μm
- Mask size: 5-inch diameter
- Sample size: up to 4-inch diameter
- UV lamp power: 250W
- Silicon dry etch by fluorine chemistry, selective for SiO₂ (10:1 etch ratio)
- Base vacuum: 1 × 10⁻⁴ mbar, process pressure: 5 × 10⁻² mbar
- RF power: 300W
- Substrate size: small to 4-inch diameter, flat required
- Gases: O₂, Ar, CHF₃, N₂
- Etch depth: up to 1 μm
Contact Us
Mr. Narayana Rao G.
Deputy Manager
Email: gnrao@hyderabad.bits-pilani.ac.in
Prof. Satish Kumar Dubey
Associate Professor
Department of Mechanical Engineering
BITS Pilani Hyderabad Campus
Email: satishdubey @ hyderabad.bits-pilani.ac.in
Phone: +91-40-66303673
How to Apply
Browse current openings, review eligibility criteria and
submit your application through our online portal.
For any technical issue during application submission, please reach out to HR at hr@dubai.bits-pilani.ac.in